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Tantalum silicide (TaSi2) thin films were sputter deposited on p- and n-type silicon substrates using ultrapure TaSi2 targets. The TaSi2/Si samples were annealed in nitrogen or forming gas or oxygen containing steam at temperatures in the range of 400–900°C. The sheet resistances of TaSi2/Si were measured by four-point probe before and after anneal. The structure of these films was investigated using...
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