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A 30 nm gate length InGaAs channel MOSFET MMIC technology is presented. 100 mm semi-insulating GaAs substrates with a metamorphicaly grown InGaAs/InAlAs device heterostructure are used. Al2O3 is deposited as gate dielectric onto the In08Ga02As channel by atomic layer deposition. The gate layout was optimized for monolithic microwave integrated circuit (MMIC) applications using T-gates and wet chemical...
For THz communication systems, highly directive antennas are required to overcome the high free space path losses. For this reason, electrical beam steering is one of the key challenges for future applications. In this paper, a design for a first electrically steerable antenna operating at around 300 GHz is presented. The design is based on a phased array which consists of four horn antenna elements...
High gain amplifier MMICs (monolithic microwave integrated circuits) addressing broadband radar and communication applications at the waveguide bands WR-6 (110 - 170 GHz) and WR-3 (220 - 325 GHz) are presented. All circuits are manufactured in the next generation metamorphic high electron mobility transistor (mHEMT) technology featuring 20 nm gate length and a strained 100% InAs channel. The transistors...
A bond-wire-free interconnection between monolithic microwave integrated circuit (MMIC) and antenna using a stacked patch configuration is investigated. An edge-fed patch on a gallium arsenide (GaAs) MMIC chip drives a patch antenna integrated in the lid of the MMIC package. The lid is formed using a liquid crystal polymer (LCP) substrate. The first implementation using a laminated multichip module...
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