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For pure PZT (Pb(Zr0.52Ti0.48)O3) which demonstrates excellent piezoelectric performances, powder-based film requires very high sintering temperature (∼1250°C) in order to obtain high density and good electromechanical properties of the film. However, high processing temperatures via volatilization PbO at 900°C, that temperature arise inter-diffusion or reaction between PZT active materials and Si...
We fabricated PZT thick film cantilever based on piezoelectric lead zirconate titanate (PZT) using SiC wafer. Electromechanical properties of PZT microcantilever such as nonlinear behavior under high voltage and behavior in liquid were investigated. The decrease in resonant frequency with an increase in electric field could be explained by the increase in elastic compliance of PZT thick film because...
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