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In this paper an advance overview of our activity in the field of near-infrared silicon photodetectors, is presented. Proposed photodetectors are based on the internal photoemission effect through a Schottky junction and their fabrication results completely compatible with the silicon technology. Taking advantages by both new structures and new two-dimensional emerging materials a progressive increase...
Optically pumped ultrafast vertical external cavity surface emitting lasers (VECSELs), also referred to as semiconductor disk lasers (SDLs), are very attractive sources for ps- and fs-pulses in the near infrared [1]. So far VECSELs have been passively modelocked with semiconductor saturable absorber mirrors (SESAMs, [2]). Graphene has emerged as a promising saturable absorber (SA) for a variety of...
We passively modelock an optically pumped VECSEL by using a single-layer graphene saturable absorber mirror, resulting in pulses as short as 473 fs. A broad wavelength tuning range of 46 nm is achieved with three different VECSEL chips, with a single chip 21 nm are covered.
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