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A program for three-dimensional simulation of layer deposition has been developed. It is based on physical models for the description of the specific processes, and uses a triangular surface representation. The discretized surface is shifted according to the growth rates calculated from the model. Additional algorithms for deleting nearly degenerated triangles and for the adaptive refinement of...
A new approach is used for the calculation of transport coefficients for dopants and vacancies from atomic jump frequencies in the presence of dopant or vacancy gradients. Results are shown for diffusion under vacancy gradients with an attractive potential between the dopant and the defect. It is demonstrated that for a given vacancy gradient not only the absolute value but also the sign of the dopant...
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