The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
ZnO-based thin film transistors (ZnO-TFTs) were fabricated by sputtering of ZnO on 200 nm SiO2 on p+-Si substrates. Forming gas annealing (FGA) was carried out directly after deposition at 400°C, 450°C, and 500°C for 1h. TFTs annealed at 400°C exhibited a high threshold voltage (VTh) of 11 V while those annealed at 500°C showed a low VTh of -3 V. Saturation mobility (μsat) increased slightly with...
High dose Ge+ ions were implanted into SIMOX substrates to synthesize SiGe alloys. These samples were evaluated by using RBS channeling and XTEM. The dose of implanted Get effects strongly the density of defects remaining in the surface SiGe layer. At a dose of 1.6??1016 Ge+ cm??2, SiGe layer with a very good crystallinity could be achieved through annealing at 950??C for 1h.
n+p-diodes with high conductivity MoSi2-contacts were fabricated using self-aligned silicide technology and ion-beam mixing for silicidation. For optimizing contact properties, different ion-beam mixing processes were compared. The first mixing process investigated was a conventional one, using arsenic ions for silicide formation and doping of the underlying silicon substrate. After mixing, rapid...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.