Wyniki wyszukiwania dla: U. N. Roy

Pozycje od 1 do 9 spośród 9 wyników

artykuł

Analysis of Defects on Chemically-Treated CdZnTe Surfaces

A. Hossain, A. E. Bolotnikov, G. S. Camarda, Y. Cui, więcej

Journal of Electronic Materials > 2015 > 44 > 9 > 3018-3022

In this work, we focused on investigating the various defects that extend into the near-surface region of CdZnTe (CZT) crystals, and on exploring processing techniques for producing a smooth, non-conductive surface that is ideal for growing thin films and depositing contacts. We determined the surface’s features and the chemical species present using atomic-force microscopy, x-ray photoelectron spectroscopy,...

artykuł

Thermo‐migration of Te inclusions in CdZnTe during post‐growth annealing in a temperature‐gradient field

G. Yang, A. E. Bolotnikov, P. M. Fochuk, G. S. Camarda, więcej

physica status solidi c > 11 > 7‐8 > 1328 - 1332

We studied the post‐growth annealing of CdZnTe crystals in a temperature‐gradient field and compared the changes of Te inclusions in CdZnTe crystals before and after annealing. The infrared (IR) transmission microscopy shows that Te inclusions can migrate towards the high‐temperature end and leave some smaller dark spots behind. These dark spots may be voids within the original inclusions left behind...

artykuł

Topographic Evaluation of the Effect of Passivation in Improving the Performance of CdZnTe Detectors

A. Hossain, A. Dowdy, A. E. Bolotnikov, G. S. Camarda, więcej

Journal of Electronic Materials > 2014 > 43 > 8 > 2941-2946

Surface passivation reportedly is an effective technique for controlling surface leakage current and its related electronic noise. Several chemical agents have been effectively used for passivating cadmium zinc telluride (CdZnTe or CZT) surfaces; however, the long-term stability and the adverse effect on the metal contacts remain questionable. In this study, we reviewed two popular passivating agents,...

rozdział

Semiconductor disk laser pumped Cr²⁺:Chalcogenide lasers

N. Hempler, J.-M. Hopkins, B. Rosener, N. Schulz, więcej

2008 Conference on Lasers and Electro-Optics > 1 - 2

2008 Conference on Lasers and Electro-Optics (CLEO)

The optically-pumped semiconductor disk laser is shown to be a practical low-noise pump source for Cr²⁺:chalcogenide lasers. Results on cw-pumping of a Cr²⁺:ZnSe and quasi-cw-pumping of a Cr²⁺:CdZnTe laser are presented.

artykuł

Characterization of Cd_1−xZn_xTe crystals grown from a modified vertical bridgman technique

Y. Cui, M. Groza, G. W. Wright, U. N. Roy, więcej

Journal of Electronic Materials > 2006 > 35 > 6 > 1267-1274

Cd_1−xZn_xTe (CZT) crystals grown from a modified vertical Bridgman technique were characterized by means of an optical polarized transmission technique using the Pockels effect, low-temperature direct current (DC) photo-conductivity technique, low-temperature photoluminescence (PL) spectroscopy, room-temperature PL mapping technique, and detector performance measurements. Electric field mapping indicates...

artykuł

Uniform Cr²⁺ doping of physical vapor transport grown CdS_xSe_1−x crystals

U. N. Roy, O. S. Babalola, J. Jones, Y. Cui, więcej

Journal of Electronic Materials > 2005 > 34 > 1 > 19-22

The Cr²⁺ doped CdS_0.8Se_0.2 crystals were grown by the vertical, self-seeded, physical vapor transport (PVT) technique. Good quality, crack- and inclusion-free single crystals were grown with an average Cr²⁺ concentration of 5 × 10¹⁸ cm⁻³. Different source-to-tip distances were used to improve the segregation coefficient (Cr_crystal/Cr_source) of the grown crystals. It was observed that lowering the...

artykuł

Luminescence study of ZnTe:Cr epilayers grown by molecular-beam epitaxy

Ming Luo, B. L. Vanmil, R. P. Tompkins, Y. Cui, więcej

Journal of Electronic Materials > 2003 > 32 > 7 > 737-741

Incorporation of Cr into ZnTe epilayers grown by molecular-beam epitaxy (MBE) is reported. Photoluminescence (PL) using both continuous wave (CW) and pulsed-excitation sources is used to characterize the radiative efficiency of doped layers in the infrared region. The Cr²⁺ ions produce a broad emission band peaking in the 2–3 µm range, which is of potential use in tunable-laser devices. The optimum...

artykuł

Photoluminescence of CdTe crystals grown by physical-vapor transport

W. Palosz, K. Grasza, P. R. Boyd, Y. Cui, więcej

Journal of Electronic Materials > 2003 > 32 > 7 > 747-751

High-quality CdTe crystals with resistivities higher than 10⁸ Ω cm were grown by the physical-vapor transport (PVT) technique. Indium, aluminum, and the transition-metal scandium were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 eV...

artykuł

Growth of undoped and chromium-doped CdS_xSe_1−x crystals by the physical vapor transport method

U. N. Roy, Y. Cui, C. Barnett, K. -T. Chen, więcej

Journal of Electronic Materials > 2002 > 31 > 7 > 791-794

Chromium-doped CdSe is one of the host materials being considered for solid-state tunable mid-infrared (IR) lasers. Alloying CdSe with CdS allows the increase of the thermal conductivity of the crystal (for CdS the thermal conductivity is a factor of 4 larger than CdSe), which is a favorable parameter as a laser host. In this study, we have grown CdS_xSe_1−x (x≅0.8) single crystals by the physical vapor...

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