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For the first time, we will present production-ready heterogeneous charge trap NAND technology based on Silicon Rich Nitride. The competitive product performance, reliability, and manufacturability demonstrated at the 43nm node, in conjunction with the planar cell architecture have laid the foundation for scaling to < 20nm.
The conduction mechanisms of dielectric breakdown (BD) in MOS capacitor structure with nanocrystals (NCs) embedded in bi-layer gate stacks (SiO2/Al2O3) are studied systematically. Using a unique stressing methodology of inducing a BD path in one dielectric layer, the charging and discharging phenomenon of the metal NCs and leakage mechanism in the degraded gate stacks are found to be strongly dependent...
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