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Due to their better figure of merits, gallium nitride field effect transistors (GaN FETs), when employed as the switching devices in power electronics applications, have better performance than conventional silicon metal-oxide-semiconductor field effect transistors (Si MOSFETs). One of the superiorities of GaN FETs is their ability to switch very fast, which results in low switching losses. However,...
The effects of comparator input common-mode voltage Vcm are analyzed in this paper. The analysis clearly shows a trade-off in the choice of Vcm in terms of offset, noise, power and speed. Based on the analysis, an energy efficient SAR ADC switching technique is proposed with less Vcm variation and better linearity compared with the widely used monotonic switching technique. Both the simulation results...
This paper presents a scaling-friendly continuous-time closed-loop VCO-based ΔΣ ADC. It uses the VCO as both quantizer and integrator, and thus, obviates the need for power-hungry scaling-unfriendly OTAs and precision comparators. It arranges two VCOs in a pseudo-differential manner, which cancels out even-order distortions. More importantly, it brings an intrinsic clocked averaging (CLA) capability...
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