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For the first time, we demonstrate stressor contact etch stop liner (sCESL) modulation of parasitics/external resistance in nonplanar devices. We report 17% saturation drive current enhancement in underlap doped cMOS FinFETs attributed to simultaneous lowering of RS/D via biaxial S/D stress and μo increase via effective uniaxial channel stress. Our observations imply that biaxial strain engineering...
Uniaxial process induced stress is being adopted in all 90, 65, and 45nm high performance logic technologies. The uniaxial stress offers large performance improvement at low cost and minimally increased manufacturing complexity and is scalable to future technology nodes. The mobility enhancement is larger for uniaxial than biaxial stress and can be understood from the strain altered band structure.
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