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SiC power devices were die bonded to a AlN/Cu/Ni(Au) direct bonded copper (DBC) substrate with a Au-Ge eutectic solder in a vacuum reflow system. The long term joint reliability of the bonded chips was evaluated at 330degC in air for up to 1600 hours. The bonded samples were inspected with a micro focus X-ray TV system. The microstructure of the samples was observed and analyzed by the scanning electron...
A novel three-dimensional packaging method for Al-metalized SiC power devices has been developed by means of Au stud bumping technology and a subsequent vacuum reflow soldering process with Au-20Sn solder paste. Al-metalized electrodes of a SiC power chip can be robustly assembled to a direct bonded copper (DBC) substrate with this method. The bump shear strength of a Au stud bump on an Al electrode...
The tendency of high efficiency and high power density of power inverters needs three-dimensional (3-D) packaging techniques for power module packaging. In a 3-D power device packaging, it is necessary to bond electrodes to a substrate or other chips by solders. However, the "upper" electrodes of most power devices are metalized with Al and are very difficult to be directly bonded to a substrate...
A silicon carbide (SiC) module with a high operating temperature has been designed, fabricated and tested at a device temperature of 200degC. The module has a multi- layered structure consisting of a SiC chip, a direct bond copper (DBC) SiN ceramic substrate, a copper-based plate, and water-cooled heatsink. The module was designed to have a temperature distribution of 200degC at the chip joint, 150degC...
Power losses of 700V 2.7mOmegacm2 SiC-MOSFETs including influences of circuit stray inductances have been investigated with an originally developed circuit power loss simulator. The device parameters of the SiC-MOSFETs for the power loss calculation are extracted from a SiC-IEMOSFET fabricated at AIST PERC. The power losses of three types of chip areas are investigated and compared to power loss of...
A novel circuit parameter design concept called "Power Loss Design Platform" has been proposed to realize high output power density (OPD) converters. The platform concept enables the exact power loss design, taking the effect of correlations among converter parameters into consideration under real circuit condition. An experimental apparatus has been fabricated based on the platform concept...
A novel chip joint method for bonding SiC power device chips with Al metallized electrodes has been developed for three-dimensional (3D) packaging. This method is a combination of Au stud bumping on an Al metallized electrode of a power chip and subsequent reflow soldering with Au-20Sn solder. The die shear strength of a Au-stud-bumped SiC power device chip bonded on a AlN/Cu/Ni(Au) substrate with...
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