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A silicon carbide (SiC) module with a high operating temperature has been designed, fabricated and tested at a device temperature of 200degC. The module has a multi- layered structure consisting of a SiC chip, a direct bond copper (DBC) SiN ceramic substrate, a copper-based plate, and water-cooled heatsink. The module was designed to have a temperature distribution of 200degC at the chip joint, 150degC...
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