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A novel three-dimensional packaging method for Al-metalized SiC power devices has been developed by means of Au stud bumping technology and a subsequent vacuum reflow soldering process with Au-20Sn solder paste. Al-metalized electrodes of a SiC power chip can be robustly assembled to a direct bonded copper (DBC) substrate with this method. The bump shear strength of a Au stud bump on an Al electrode...
A novel chip joint method for bonding SiC power device chips with Al metallized electrodes has been developed for three-dimensional (3D) packaging. This method is a combination of Au stud bumping on an Al metallized electrode of a power chip and subsequent reflow soldering with Au-20Sn solder. The die shear strength of a Au-stud-bumped SiC power device chip bonded on a AlN/Cu/Ni(Au) substrate with...
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