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Terahertz emission by the photon-assisted resonant radiative transitions between graphene layers (GLs) in double-GL structures is theoretically and experimental demonstrated. Devices such as terahertz/infrared lasers base on this technology are very promising for terahertz optoelectronics.
We experimentally observed the fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an epitaxial graphene-on-Si heterostructure. The result is interpreted as an amplified stimulated THz emission and well supports the occurrence of negative dynamic conductivity in the terahertz spectral ranges.
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