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We report on amplified spontaneous broadband terahertz emission in 1–7.6 THz range at 100 K via current injection in a distributed-feedback dual-gate graphene-channel field effect transistor (DFB-DG GFET). The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission...
We demonstrate an intense stimulated emission of 0.1–1-μW terahertz (THz) monochromatic radiation in InP-based asymmetric chirped dual-grating-gate (AC-DGG) high electron mobility transistors (HEMTs) at 140–290K. In the research of modern THz electronics, development of compact, tunable and coherent sources operating in the THz regime is one of the hottest issues. Hydrodynamic nonlinearities of two-dimensional...
Recent advances in emission and detection of terahertz radiation using two-dimensional (2D) electron systems in III–V semiconductors and graphene are described. First the 2D plasmon resonance is presented to demonstrate intense broadband terahertz emission and detection from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor...
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