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A novel structure of Reconfigurable Orthogonal Antenna Array (ROAA) was constructed as a box structure which includes four verticals of the Reconfigurable Planar Antenna Array (RPAA) at 5.8GHz is presented. The main objective of this work is to design and analyze the ROAA with its active feeding network (based on PIN diode switches) to steer beam over 360°. The integration of PIN diode switches with...
The effects of pre-bake temperature, pressure and duration have been studied for silicon SEG substrates. Silicon cusp and trough formation adjacent to the oxide sidewalls in association with the undercutting of the oxide features is reported. Activation energies of Eu=3.35eV for the undercut reaction and E1=1.98eV for the trough forming reaction have been calculated from measurements of the variation...
Thin films deposited in low pressure glow discharges are finding application in various areas: silicon nitride (P-SiN), oxide (P-SiO2) and oxynitride (P-SiON), all good insulators, are used in integrated circuit technology as passivation layers and dielectrics, whereas organic plasma polymers show promise as capacitor dielectrics. These latter materials, however, have a strong tendency to age, which...
Plasma techniques have become widely accepted in the semiconductor industry for a range of applications. These can conveniently be divided into two broad categories, namely 1. plasma deposition, and 2. plasma etching.
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