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The surface recombination velocity in n-type heteroepitaxial GaN(0001) is shown to decrease dramatically when the surface is chemically treated with aqueous and alcoholic solutions of inorganic sulfides, such as ammonium or sodium sulfide (NH4)2Sx and Na2S). The room-temperature excitonic photoluminescence (PL) intensity increases by a factor of four to six after treatment, and improvements persist...
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