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GaN/AlN is a promising material system for the development of an ultrafast intersubband technology operating at telecommunication wavelengths, thanks to the large conduction band offset and sub‐picosecond intraband relaxation time. In this paper, we explore short wavelength infrared intersubband transitions occurring in the conduction band of GaN/AlN heterostructures in both planar and nanowire (NW)...
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