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This article describes the fabrication of nitrogen‐polar AlxGa1−xN/AlN (x = 0, 0.1) quantum dot (QD) superlattices (SLs) integrated along GaN nanowires (NWs) for application in electron‐pumped UV sources. The NWs are grown using plasma‐assisted molecular beam epitaxy on n‐type Si(111) wafers using a low‐temperature AlN nucleation layer. Growth conditions are tuned to obtain a high density of noncoalesced...
This paper assesses the difficulties associated with Al incorporation in nonpolar m‐plane GaN/AlGaN multi‐quantum‐wells grown on free‐standing m‐plane GaN. Structures with average Al mole fraction below 6% show atomically flat surfaces and no extended structural defects, in spite of alloy fluctuations up to 30% of the average concentration. Increasing the average Al composition of the alloy above...
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