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We present novel terahertz (THz) detectors, using nanoelectronic devices, such as 2-D semiconductor and carbon nanotube (CNT). Our detector is useful for high-resolution THz imaging, which requires highly sensitive detection. We have developed a frequency-tunable THz-photon detector and an on-chip near-field imaging detector. The detection mechanism of the former is that the CNT transistor detects...
We have fabricated a 24 GHz power amplifier (PA) module in a standard 90-nm Si-CMOS process. The PA module consists of two 2-stage cascode configuration PA MMICs and an off-chip Wilkinson power divider and combiner. Each single PA MMIC has a gain of 22 dB with a P3dB output power of 18.3 dBm at 24 GHz load-pull measurement. The fabricated PA module demonstrates state-of-the-art performance, including...
This paper presents a 20-GHz pseudo-differential power amplifier (PA) fabricated in a standard 90-nm Si-CMOS process. The pseudo-differential PA has a two-stage cascode configuration with differential input and output ports. Assuming the use of an off-chip transformer, the input impedance of each single PA is designed to be 6.25 Omega and the output impedance to be 25 Omega. The individual amplifier...
A novel high RF power MOSFET was developed to integrate a high-power amplifier into 45 nm node CMOS technology. A self-aligned silicide and laterally modulation-doped channel attained the lowest on-resistance of 1.7 Omega-mm with a high breakdown voltage of more than 10 V and successfully achieved the highest output power density of 0.6 W/mm at the maximum power-added efficiency ever reported among...
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