The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents a 20-GHz pseudo-differential power amplifier (PA) fabricated in a standard 90-nm Si-CMOS process. The pseudo-differential PA has a two-stage cascode configuration with differential input and output ports. Assuming the use of an off-chip transformer, the input impedance of each single PA is designed to be 6.25 Omega and the output impedance to be 25 Omega. The individual amplifier...
This paper describes the implementation of 60 and 77GHz PAs in standard 90nm CMOS technology. An accurate transistor model is developed that enables designing circuits operating at frequencies up to 80GHz. The circuits are designed with a unique matching topology for reducing the RF signal loss in matching networks.
A next-generation ultra-wideband (UWB) pulse generator with a biphase function is reported. To obtain ultrashort duration pulses, a novel speeding-up AND circuit and biphase modulator circuit were developed. The IC was fabricated in a 0.13-μm-gate InP-HEMT technology, which has a gm of 1520 mS/mm and a fT of 195 GHz. A pulse with a full width at half maximum of 9 ps and a 15-ps biphase modulated pulse...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.