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CMOS technology is being advanced rapidly and applications are now expanding into the millimeter-wave regime on a global basis. 60 GHz wireless systems in CMOS have already been reported. In addition, 77 GHz automotive radar is becoming the target for CMOS technology. This paper describes what is believed to be the first transceiver chip for 77 GHz radar in standard 90 nm CMOS.
A novel high RF power MOSFET was developed to integrate a high-power amplifier into 45 nm node CMOS technology. A self-aligned silicide and laterally modulation-doped channel attained the lowest on-resistance of 1.7 Omega-mm with a high breakdown voltage of more than 10 V and successfully achieved the highest output power density of 0.6 W/mm at the maximum power-added efficiency ever reported among...
This paper describes the implementation of 60 and 77GHz PAs in standard 90nm CMOS technology. An accurate transistor model is developed that enables designing circuits operating at frequencies up to 80GHz. The circuits are designed with a unique matching topology for reducing the RF signal loss in matching networks.
A 25-GHz, 40-mW power amplifier with SO-Omega input and output matching circuit in standard 90-nm Si-CMOS technology is reported. The supply voltage of 3.3 V is compatible with that of conventional wireless communication systems. To enable this, a stacked cascode configuration with a Vdd = 1.2 V transistor and a Vdd = 3.3 V thick oxide transistor for digital I/O interfaces is used. The power amplifier...
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