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The annealing of defects in Sb/Sn implanted diamond has been studied in 119 Sn Mössbauer spectroscopy following the implantation of radioactive parent isotopes 119 Xe and 119m Sn. Our results show that after annealing above 1300K, 40% of the implanted ions are located at or near regular sites in the lattice. Significant implantation induced defects however remain.
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