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In this paper, the preparation of In2O3 film and the fabrication of the In2O3 homojunction TFTs using anodization technology are reported. It is shown that the resistivity of In2O3 film increases significantly, and the structure becomes porous after the anodization processing. The In2O3 homojunction TFTs from a 30 V anodization voltage have a mobility of 20.8 cm2/V·s, a threshold voltage of −4.7 V,...
Thin-film transistors based on anodized indium-tin-oxide (ITO) active layer and anodic tantalum oxide (Ta2O5) gate dielectric were investigated. The electrical and optical properties of ITO film can be affected by an anodization treatment. The anodized ITO TFT shows an on/off current ratio of 108, a saturation mobility of 28.8 cm2V−1s−1, a subthreshold swing of 0.51 V/dec, and a threshold voltage...
A multithreshold voltage amorphous indium–gallium–zinc-oxide (a-IGZO) thin-film transistor (TFT) technology based on the anodic oxidation (anodization) technique is demonstrated. It is shown that the characteristics of the a-IGZO channel layer can be considerably tailored by the anodization treatment. As a result, the threshold voltage of the a-IGZO TFTs depends on the anodization voltage, making...
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