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The rapidly-developing field of confined polymers is reviewed in this volume. Special emphasis is given to polymer aspects of this interdisciplinary problem. Taken together, the contributions offer ample evidence of how the field of polymer science continues to evolve with the passage of time. The topics revolve around the tendency of surfaces to impede chain relaxation and to stimulate new sorts...
A novel low cost and low temperature PVD planarized Al-Cu:0.5% process for simultaneous high aspect ratio interconnect hole fill and metal layer planarization is reported. This is accomplished by using low pressure Al-Cu sputtering deposition with moderate heat applied to the wafers. The low pressure sputtering deposition reduces the amount of migrated Al atoms needed for hole fill and metal layer...
We have investigated the impact of using several new promising low dielectric constant materials as inter-level dielectrics for high performance VLSI/ULSI interconnect applications. The new low dielectric constant materials under study are spin-on deposited materials which include silsesquioxane, fluorinated polyimide, fluorinated poly(arylethers), and perfluorocyclobutane with dielectric constants...
Discusses a manufacturable process for sputter-depositing collimated Ti/TiN films. Prior to the project, the applicability of this technology to deep submicron geometries was postulated but unproven. The collimated sputtering process was characterized and optimized by using design of experiments. The step coverage, thickness uniformity, material properties, electrical resistivity, defect density and...
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