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The authors have proposed a photon-emitting LED (light-emitting diode) combined with superconducting electrodes, which is expected to be an on-demand entangled photon pair source. The main mechanism is based on the coherent spatial extension of the Cooper-pair states to the photon emitting layer, which is expected to enhance the oscillator strength of the radiative recombination processes by the Cooper-pair...
To demonstrate the contribution of Cooper pairs to radiative recombination in a semiconductor, a n-InGaAs/p-InP light emitting diode with superconducting Nb electrodes was fabricated. Electroluminescence as well as photoluminescence from the n-InGaAs into which electron Cooper pairs were expected to penetrate from the superconducting Nb electrodes by the proximity effect was drastically enhanced at...
The first p-channel GaAs SIS (semiconductor-insulator-semiconductor) FET having a p+-GaAs/undoped GaAlAs/undoped GaAs structure is reported. The FET fabricated shows a transconductance of gm=30 mS/mm, a drain conductance of gd=2.5 mS/mm and a threshold voltage of Vth=+0.2 V at 77 K in the dark.
The first self aligned accumulation-mode GaAs MIS-like FET having an n+ -GaAs/undoped GaAlAs/undoped GaAs structure is reported. The FETs fabricated show the threshold voltage of almost zero (V?th = 0.035 V) and very uniform (?Vth = 0.013 V) characteristics, as expected. The transconductance is as high as 170 mS/mm, which is the highest value ever reported on GaAs MIS-like FETs.
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