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In our study, the devices with Pt/Ti/TaOx/Pt, where x ranges from 1.34 to 1.47, Pt/Ti/HfO2/Pt and Pt/Ti/TaOy/HfO2/Pt were fabricated. The TaOx and HfO2 were the switching layers for single layer devices and for hybrid device TaOy acted as oxygen reservoir and HfO2 acted as switching layer. The single layer devices exhibited co-existence of bipolar and unipolar switching. For bipolar switching the...
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