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SiC nanowires over 10μm in length and 20-100nm in diameter have been synthesized by a novel in situ chemical vapor growth process on RS-SiC plates. The SiC nanowires were identified as single crystal β-SiC with Si-C chemistry. The growth direction of the nanowires is <111>. The growth mechanism is discussed and a kinetic vapor-solid growth mechanism is proposed. The process demonstrates the...
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