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ZnO thin films are prepared on α-Al 2 O 3 (0001) substrates by zinc evaporation in O 2 −N 2 mixed radio-frequency plasmas. Films can be deposited at N 2 mixing ratios within 50% in the case that the substrate temperature is 400°C. The ZnO films are c-axis oriented, and all the transmission spectra agree with the typical spectrum of ZnO. The electrical properties...
In x Ga 1-x N thin films mainly having large InN molar fractions are grown on α-Al 2 O 3 (0001) and GaAs (111) B substrates by reactive evaporation, and some properties of them are investigated. C-axis oriented In x Ga 1-x N films are similarly obtained on each substrate; however, their crystallinity deteriorates...
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