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In this work, we have developed a selective wet etching technique for n+-SiC substrate using electrochemical etch process. A mixture of hydrofluoric acid and hydrogen peroxide was used as an electrolyte and the etch rates exceeding 200 μm per hour at the current density of 50 mAcm−2 was achieved. This process is highly selective and the etching process stops at the interface of n+ SiC substrate and...
We report on the design, simulations and optimization of 5–20kV GaN and SiC vertical superjunction structures. The space charge in the GaN and SiC superjunction pillars have been optimized using superjunction p-n diode, and the best trade-off between breakdown voltage (BV) and specific on-resistance (Ron, sp) have been obtained by varying the pillar dosage, length and width.
A physical model for the AC I–V characteristics of high voltage MOS based power devices is presented here. A closed form expression is derived to predict the AC I–V characteristics based on the knowledge of widely used C-V measurement method used to characterize MOS interfaces. This model is then used to compare commercial Si and SiC high voltage power MOSFETs.
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