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We have compared two different methods, the shallow recess/field oxide isolation and the mesa isolation, for electrical isolation between GaN lateral MOS-Channel HEMTs. Transistors with these two isolation methods have been fabricated and have been experimentally compared. The off-state leakage current of the devices with linear geometries has been compared with that of the devices with self-enclosed...
In this contribution, the effective properties from the dispersion relation are determined in particular chirality parameters. The applicability of an effective medium approach is also discussed. The dispersion relation is computed directly from Maxwell's equations without further approximations. The dispersion relation is believes to be best suitable to describe the light propagation inside the structure.
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