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The quasi-static capacitance–voltage determination of the electron density of states as a function of energy at the semiconductor–insulator interface is addressed. The respective effects are analyzed of random and systematic errors in a measured capacitance–voltage characteristic on the interface-state distribution derived. The random errors show up as fluctuations that grow indefinitely in magnitude...
A novel approach to producing long-lived, reconfigurable, self-organized nanoscale electronic systems of a low dimension (quantum wells, wires, dots, superlattices, etc.) in a semiconductor is discussed. This approach consists of creating a regular charge distribution in an adjacent dielectric, so that a two-dimensional potential distribution is induced in the interface layer of the semiconductor...
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