The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
GaAs FET with a single sub-surface delta-doped channel is realized. The source and the drain have a tunnel ohmic contact to the channel with rather low contact resistance <10−4 ohm cm2. A gate leakage current does not exceed 1 μA in the bias range −1.5…+0.5 V. Due to the extremely thin active region of FET, their current is very sensitive to condition of GaAs surface.
The effect of active layer homogeneous doping in a low-barrier metal-semiconductor contact with near-surface delta-doping on current and capacitance characteristics have been investigated. Difference in characteristics of diodes with Mott and Schottky contacts develops with increasing doping, which results in partial active layer depletion. For really important thickness of an active layer in microwave...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.