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We have been developing a monolithic active pixel sensor with the 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, i.e. SOIPIX, for the X-ray imaging spectroscopy on future astronomical satellites. SOIPIX includes a thin CMOS readout layer and a thick high-resistivity Si-sensor layer vertically on a single chip, which would provide advantages in capabilities of direct and flexible readout circuitries...
The dislocation density in the superficial silicon layers of SIMOX wafers formed under different oxygen implantation conditions has been investigated using a Secco etching technique. An extremely low dislocation density in the order of 10/sup 2/ cm/sup -2/ has been obtained for waters implanted at 180 keV with a dose of 0.4*10/sup 18/ and doses ranging from 0.9 to 1.2*10/sup 18/O/sup +//cm/sup 2/...
The electric-field-shielding effect was found in a layer consisting of a mixture of polycrystalline silicon and silicon oxide formed by oxygen ion implanatation. The layer was formed between the buried SiO2 and the upper Si layer, which improved characteristics for MOSFETs fabricated using SIMOX (separation by implanted oxygen) technology. By forming this layer, the threshold voltages for the MOSFETs...
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