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The dislocation density in the superficial silicon layers of SIMOX wafers formed under different oxygen implantation conditions has been investigated using a Secco etching technique. An extremely low dislocation density in the order of 10/sup 2/ cm/sup -2/ has been obtained for waters implanted at 180 keV with a dose of 0.4*10/sup 18/ and doses ranging from 0.9 to 1.2*10/sup 18/O/sup +//cm/sup 2/...
The surface structure of SIMOX wafers produced by a 100 mA class oxygen implanted is investigated. Wafer temperature during implantation affects the surface morphology and thickness of the top silicon layers. The unevenness of the surface is closely related to cavities in the top silicon layers. Film thickness reduction is explained by the sublimation of SiO formed at the surface.<<ETX>>
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