The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Ga2Te3 films have been grown on GaAs(100) and (111) substrates using metalorganic chemical vapor deposition (MOCVD) at temperatures ranging from 350°C to 450°C. Very uniform films were grown at lower temperatures of 350°C on GaAs(100) substrates. As the temperature increased the roughness of the films increased, with many hillocks observed on films deposited at 450°C. The Ga2Te3 films grown on GaAs(100)...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.