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This paper presents a physics-based mathematical model for anionic memristor devices. The model utilizes Poisson- Boltzmann equation to account for temperature effect on device potential at equilibrium and comprehends material effect on device behaviors. A detailed MATLAB based algorithm is developed to clarify and simplify the simulation environment. Moreover, the provided model is used to simulate...
By using an accurate switching model it's possible to adjust the thermal distribution between the semiconductors and increase the output power of the converter for Active Neutral Point Clamped converters [1]. In this paper the study of switching sequence optimization for 3 Level ANPC converters is extended to analyze the performance of the converter under different cooling water inlet temperatures...
Due to size and weight limitations, possible integrations of power electronics devices with electrical machines and propulsion engines are welcome in More-Electric-Aircrafts (MEA). Consequently, power converters are required to operate in harsh environments with high temperatures. SiC power devices are preferable in this context since they can tolerate high junction temperature and contribute reducing...
As mainstream processing technology advances into 65 nm and beyond, many factors that were previously considered secondary or insignificant, can now have an impact on chip timing. One of these factor is inversed temperature dependence (ITD). As supply voltage continues scaling into sub-IV territory, delay-temperature relationship can be reversed on some cells, meaning that device switching time may...
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
In deep submicron era, to prevent larger amount of SRAM from more frequently encountered overheating problems and react accordingly for each possible hotspots, multiple ideal run-time temperature sensors must be closely located and response rapidly to secure system reliability while maintaining core frequency. This paper presented a method to extract run-time temperature information from multiple...
This paper addresses reconfigurations and the cooling of a 3D stacked mesh array by considering thermo-radiation. We propose a heuristic replacement policy to avoid defects on a wafer by moving hot processing elements (PEs) toward edge of the wafer to cool efficiently. Introducing a thermo-radiation model for the 3D stacked complex, the reconfiguration performance and thermo-radiation of the 3D stacked...
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