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The temperature impact on the Ohmic contact to Gallium Nitride (GaN) device properties is investigated in the range of 25°C to 300°C by means of the Transmission Line Method (TLM) technique. This study is centered in two kinds of Ohmic contacts: Implanted N+ GaN and heterojunction AlGaN/GaN contacts. For N+ contact resistance behavior is explained in terms of the field-effect or thermionic field effect...
This paper concentrates on the performance of lattice-matched and metamorphic triple junction solar cells under different temperatures and spectral conditions. This information is essential for a better understanding of concentrator photovoltaic systems. It is well known that, compared to single-junction cells, the performance of multi-junction solar cells shows a stronger dependence on the incident...
Temperature dependency of ballistic double gate tunnel field effect transistors (TFET) have been examined for the first time using Si and GaAs as channel material. I-V characteristics have been simulated using Kane's model of band-to-band tunneling (BTBT). It has been found that off current is more sensitive to temperature variation than on current. Moreover, this temperature dependency is also a...
This paper investigated the temperature effect on the electrical properties of an In0.5Ga0.5As/GaAs QD solar cell, leading to a better understanding of the basic cell characteristics influenced by QD incorporation which is of great importance for future design of high efficiency QD solar cells.
Thermally activated carrier leakage via defects is found to be very sensitive to the growth temperature of GaAsSb quantum wells. Optimization of the growth temperature leads to a low Jth/QW of 138A/cm2 at RT.
Temperature and length scaling dependence of double gate tunnel FET has been analyzed considering the electric field of junction depletion region. In the ballistic limit Id has been found to be dominated by effective mass and insulator dielectric constant rather than bandgap. Hence, GaAs channel TFET has identified as higher current device than Si counterpart due to lower effective mass. However,...
We propose a Loadless 4T SRAM cell using degenerately doped source (DDS) p-channel In0.53Ga0.47As Tunnel FETs (TFETs) as dual purpose access/load devices and low leakage steep sub-threshold n-channel TFETs as drive devices. A Loadless 4T CMOS SRAM cell has the requirement that the leakage current of the PMOS access transistors should be larger than the leakage current of the NMOS drive transistors...
Semiconductor lasers with quantum dot (QD) based active regions have generated a huge amount of interest for applications including communications networks due to their anticipated superior physical properties due to three dimensional carrier confinement. For example, the threshold current of ideal quantum dots is predicted to be temperature insensitive. We have investigated the operating characteristics...
In this work, we present the study on Separate Absorption, Charge and Multiplication (SACM) APDs utilising In0.52Al0.48As as the multiplication layer and In0.53Ga0.47As/GaAs0.51Sb0.49 periodic heterostructures as the absorption layer. In0.52Al0.48As lattice matched to InP has been shown to have superior excess noise characteristics and multiplication with relatively low temperature dependence compared...
We report high temperature microwave characteristics of AlGaN/GaN MISHFET and present comparative studies of this device with regular HFET structures. The effect of various temperature dependent material parameters are taken into account to evaluate the small signal parameters for wide temperature (25degC < T < 300degC) range. The effect of piezoelectric and spontaneous polarization has also...
The 1.3 mum InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with novel planar electrodes configuration were fabricated. The lasing wavelength is around 1273 nm. The typical threshold current is lower than 6 mA. The output power of 0.9 mW with slope efficiency of 0.13 W/A has been recorded. Temperature dependence of the L-I-V relationship of InAs QD VCSELs was investigated. High...
The temperature dependant electrical properties of InSbN alloys fabricated by directly nitrogen ion implanted into InSb substrate are investigated using Hall effect measurement. Intrinsic behavior is observed in the high temperature range (180-300 K). Higher nitrogen doping level and annealing temperature will result in lower electron carrier concentration. Phonon scattering dominates.
An analytical thermal model of AlGaN/GaN high electron mobility transistor (HEMTs) has been developed. This temperature dependent model incorporates the polarization effects at heterointerface. The model also accounts for the mobility degradation with increase in temperature, which is one of the major causes in deteriorating the driving current. By using the variation of band gap with temperature,...
Under ambient conditions, the temperature sensitivity of 1.3 mum GaAsSb lasers is limited by non-radiative current losses. These are shown to be a critical design consideration for producing temperature insensitive VCSEL operation around room temperature.
Full C-band 10-Gb/s operation and 100-km single-mode fiber transmission with low power penalty are demonstrated by using an InP Mach-Zehnder modulator co-packaged with a tunable laser array under a constant modulation voltage condition.
In this paper, the surface micro hole array photonic crystal structures were fabricated on p-type GaN of InGaN/GaN through photolithography and ICP dry etching process. We designed three different patterns of circle hole arrays, including square lattice array, triangle lattice array, and honeycomb lattice array. The hole diameter was around 6 mum, and the period of the lattice array was about 15 mum...
Unique correlations between the excitonic characteristics and hetero-interface charge distribution of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of non-unity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. Furthermore,...
Microscopic voids in the die attachment solder layers of high power laser diodes (HPLDs) cause to degrade their overall thermal transfer performance. This paper presents the effects of voids on the thermal conductivity, leakage and threshold currents, characteristic temperature (T0) and output power of a single quantum well (SQW) HPLD. These effects are modeled by means of finite difference method...
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