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A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
In this paper, the layered structure ZnO/Quartz (90deg rotated ST-cut) is investigated theoretically and experimentally. Both waves, Rayleigh and Love, are analyzed. Dispersion curves of phase velocities, electromechanical coupling coefficient (K2) and temperature coefficient of frequency (TCF) were calculated as a function of normalized thickness ZnO film (khZnO = 2pihZnO /lambda) and the optimum...
Optical communication systems based on dense wavelength division multiplexing (DWDM) would benefit from the ability to adjust the operating wavelength of a laser transmitter. Previous attempts, including thermal adjustment, etalon based wavelength locking, and various types of optical frequency and phase locked loops such as the Pound-Drever-Hall technique suffer from weaknesses including sensitivity...
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