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A data driven model with thermal effects is proposed for normally-off SiC JFET in this paper. The novel feature of the model is that it saves the trouble of obtaining the physical parameters. Besides, the effect of temperature on SiC JFET performance is taken into account. It is important because the physical parameters on materials and dimensions of a particular SiC JFET device are difficult to be...
A SiC BJT model including quasi-saturation effects is proposed in this paper. The model limits the number of parameters required for the Gummel-Poon model and the model parameters have been extracted from experimental plots. The modeling results are then implemented in a circuit simulator such as Saber to build a SiC BJT model. Validity of the model is confirmed by comparing the model with experimental...
A data driven model with thermal effects is proposed for normally-off SiC JFET in this paper. The novel feature of the model is that this modeling method saves the trouble of obtaining the physical parameters and the temperature of SiC JFET is taken into account. These are particularly important because the device's physical parameters on materials and dimensions are hardly to be obtained and temperature...
The main focus of our work is the characterization and structural study of 4H-silicon carbide (SiC) normally-off vertical junction field effect transistor (JFET). We will determine the experimental static Ids-Vds characteristics under temperature variation. In order to achieve a better description of SiC and metal interface properties, many interesting parameters related to the material and to the...
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