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Carbon related luminescence and lattice distortion in wurtzite GaN are studied. C atoms are intentionally doped into GaN by ion implantation method with energies of 200 or 400 keV and a fluence of 1x10 15 cm 2 and by a gas phase doping at 1273 K for 3 h under C 2 H 6 -gas flow. Lattice displacement of Ga atoms from <0001> row in as-implanted samples is estimated...
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