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The origin of unintentional hydrogen incorporation in ZnO films grown by thermal atomic layer deposition is investigated by comparing layers deposited using H2O and D2O as oxygen precursors. Secondary ion mass spectroscopy measurements of as‐grown and 800 °C annealed layers provide evidence that the hydrogen contribution originating from the oxygen precursor is weakly chemically bound and is mostly...
In this study, structural and optical properties of ZnO:Dy, ZnO:Yb, and ZnO:(Dy,Yb) films are investigated. Epitaxial ZnO films are grown by atomic layer deposition at 300 °C and implanted with Yb and Dy ions to the fluence of 5 × 1014 cm−2. The effects of Dy and Yb implantation, Dy/Yb coimplantation, and postgrowth annealing are studied by channeling Rutherford backscattering spectrometry (RBS/c)...
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