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This paper presents a 2.4GHz monolithic Class E power amplifier based on Grace 0.18um SiGe BiCMOS technology. It has a two-stage structure and adopts small DC feed inductors and on-chip matching networks. Without any off-chip components, the power amplifier achieves maximum output power of 22.4dBm, and the PAE is 33% with 2V supply. After optimizing the component parameter, the input and output terminals...
A single-pole double-throw (SPDT) T/R switch is designed in a PD SOI CMOS process for 2.4 GHz wireless applications. Based on the advantage of PD SOI device structure, the presented switch gets a high performance on insertion loss and isolation. Process and device characteristics are studied in detail, including floating body effect, substrate crosstalk reduction and on-resistivity trade-off. The...
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