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We propose an analytical, time-domain model for microring modulators, which encompasses pn-junction and resonator dynamics. It shows excellent agreement with experiment for high frequency operation beyond 20 GHz. Pulse-amplitude modulation is predicted for up to 80 Gb/s.
We derive analytic expressions for the small-signal modulation response of the transistor laser (TL) operating in the common-emitter (CE) and common-base (CB) configurations. We compare the performance (current gain and small-signal modulation bandwidth) of the TL in these two modes of operation. The CE operation results in a small-signal modulation response with the same relaxation oscillation limitations...
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