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Rf substrate biasing method was observed to succeed in controlling the transition temperature (Timt) while maintaining of almost two-order of magnitude transition in resistance changes, and also the hysteresis loops, indicating the intrinsic IMT properties of VO2 films. The lowest Tt of 36°C was achieved in the film deposited at 40 W. Asymmetrical XRD measurements revealed modifications of the aM/2...
We report on highly oriented growth of VO2(B) thin films on Mo foils by reactive sputtering and its performance as an cathode electrode material in lithium ion batteries. Reactively sputtered films under moderate O2 flow and substrate temperature revealed (001)-oriented growth on the poly-crystalline Mo foils with electrically floating potential. It can be interpreted that the oriented VO2(B) film...
Polarized Raman scattering measurements were performed on (011)-oriented, over 10μm-size VO2 grains on an Al2O3 (001) substrate. Angular intensity dependence of Raman active modes allowed to observe 17 modes among the 18 expected and to demonstrate the single crystalline character of the large domains. Analyses of intensity evolution have been used to correctly assign phonon modes and to calculate...
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