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Rf substrate biasing method was observed to succeed in controlling the transition temperature (Timt) while maintaining of almost two-order of magnitude transition in resistance changes, and also the hysteresis loops, indicating the intrinsic IMT properties of VO2 films. The lowest Tt of 36°C was achieved in the film deposited at 40 W. Asymmetrical XRD measurements revealed modifications of the aM/2...
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