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Fully transparent InZnO thin‐film transistors (TFTs), with either a bottom gate or an in‐plane gate device structure, were fabricated using the solution‐processed SA proton conducting films as gate dielectrics. The self‐assembled InZnO channel with different thickness by the gradient shadow mask was fabricated during the same batch radio‐frequency magnetron sputtering. The threshold voltage can be...
The solution‐processed sodium‐alginate (SA) films, with nanoporous/nanochannel microstructure, possess a total absorbed water number of 10420 ± 395 molecules per square nanometer, which gives rise to a high proton conductivity of 4.0 × 10−4 S cm−1. When SA films used as gate dielectric in the thin film transistors, electric‐double‐layer (EDL) would be formed whether at the dielectric/channel or at...
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