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3C-SiC thin films were grown on Si(111) substrates at 1250°C by horizontal low pressure chemical vapor deposition (LPCVD). We performed an exhaustive study on the effect of H2 flow rate on the crystalline quality, surface morphologies, growth rate, n-type doping of 3C-SiC thin films and the voids at the interface. The films show epitaxial nature with high crystal quality and surface morphology increase...
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