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A novel GaN HEMT which reduces the junction temperature is presented. The new structure uses a ring-like layout for the gate stripes, aimed at increasing the separation between stripes. Simulation and experimental results indicate improved performance of the Ring-HEMT, stemming from thermal effects and their interaction with device parameters. Compared to a regular HEMT, the new HEMT showed a decrease...
Self heating in electronic devices reduces their performance and lifetime. A novel high electron-mobility transistor (HEMT) layout that reduces the channel temperature is presented. To decrease self heating, the new distributed gate (DG) HEMT is configured with multiple, active, and nonactive sections along each gate-stripe. Simulations and experimental results indicating the improved performance...
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