The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The dependence of off-leakage current on channel film quality in poly-Si thin-film transistors has been analyzed using two-dimensional device simulation. It is found that the off-leakage current decreases as the intragrain trap density decreases for the low V gs . This is because the Phonon-assisted tunneling with Poole–Frenkel effect is the dominant mechanism of the carrier generation and...
Trap densities in poly-Si thin-film transistors fabricated by solid-phase crystallization have been extracted by measuring low-frequency capacitance–voltage characteristics and using a novel extraction algorithm. Moreover, the dependence of the trap densities on temperature and time of post annealing has been evaluated. It is found that the trap densities are flatly distributed and very roughly 10...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.